AGMSEMI AGM303MNA

AGMSEMI · FETs & Power MOSFETs · MPN AGM303MNA

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Specifications

Gate Charge(Qg)58nC@10V
Drain to Source Voltage30V
Output Capacitance(Coss)380pF
Current - Continuous Drain(Id)110A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.2V
Pd - Power Dissipation70W
RDS(on)5.5mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)291pF
Number2 N-Channel
Input Capacitance(Ciss)3.02nF

Technical details

N-Channel Array 30V 110A 70W Surface Mount PDFN5x6-8

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