AGMSEMI AGM303D1

AGMSEMI · FETs & Power MOSFETs · MPN AGM303D1

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)49nC@10V
Output Capacitance(Coss)385pF
Current - Continuous Drain(Id)100A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.5V
Pd - Power Dissipation75W
Reverse Transfer Capacitance (Crss@Vds)350pF
RDS(on)2mΩ@10V;3.1mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)2.5nF

Technical details

N-Channel 30V 100A 75W Surface Mount TO-252

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