AGMSEMI AGM303AP

AGMSEMI · FETs & Power MOSFETs · MPN AGM303AP

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)27nC@10V
Output Capacitance(Coss)380pF
Current - Continuous Drain(Id)90A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.6V
Pd - Power Dissipation42W
Reverse Transfer Capacitance (Crss@Vds)291pF
RDS(on)2.8mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)3.02nF

Technical details

N-Channel 30V 90A 42W Surface Mount PDFN-8(3.3x3.3)

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