AGMSEMI AGM302D1

AGMSEMI · FETs & Power MOSFETs · MPN AGM302D1

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)100nC@10V
Output Capacitance(Coss)520pF
Current - Continuous Drain(Id)180A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.5V
Pd - Power Dissipation83W
Reverse Transfer Capacitance (Crss@Vds)480pF
RDS(on)2.1mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)4.85nF

Technical details

N-Channel 30V 180A 83W Surface Mount TO-252

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