AGMSEMI AGM302C1

AGMSEMI · FETs & Power MOSFETs · MPN AGM302C1

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)100nC@10V
Current - Continuous Drain(Id)138A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation83W
Reverse Transfer Capacitance (Crss@Vds)480pF
RDS(on)1.8mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)4.85nF

Technical details

30V 138A 2.5V 83W 1.8mΩ@4.5V 1 N-channel TO-220 Single FETs, MOSFETs RoHS

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