AGMSEMI AGM3012H

AGMSEMI · FETs & Power MOSFETs · MPN AGM3012H

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Specifications

Gate Charge(Qg)125nC@10V
Drain to Source Voltage30V
Current - Continuous Drain(Id)193A
Output Capacitance(Coss)960pF
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.2V
Pd - Power Dissipation95W
Reverse Transfer Capacitance (Crss@Vds)932pF
RDS(on)1.2mΩ@10V;1.6mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)7.865nF

Technical details

30V 193A Surface Mount TO-263

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