AGMSEMI AGM3012AP-CP

AGMSEMI · FETs & Power MOSFETs · MPN AGM3012AP-CP

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Specifications

Drain to Source Voltage30V
Configuration-
Gate Charge(Qg)51nC@10V
Output Capacitance(Coss)2.025nF
Current - Continuous Drain(Id)139A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.2V
Pd - Power Dissipation42W
RDS(on)1.1mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)217pF
Number1 N-channel
Input Capacitance(Ciss)2.99nF

Technical details

N-Channel 30V 139A 42W Surface Mount PDFN-8(3.3x3.3)

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