AGMSEMI AGM2319EL

AGMSEMI · FETs & Power MOSFETs · MPN AGM2319EL

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Specifications

Gate Charge(Qg)11.8nC@10V
Drain to Source Voltage40V
Current - Continuous Drain(Id)4A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.5V
Pd - Power Dissipation1.2W
Reverse Transfer Capacitance (Crss@Vds)42pF
RDS(on)63mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)553pF

Technical details

P-Channel 40V 4A 1.2W Surface Mount SOT-23

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