AGMSEMI AGM2309EL

AGMSEMI · FETs & Power MOSFETs · MPN AGM2309EL

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Specifications

Drain to Source Voltage60V
Gate Charge(Qg)5.4nC@10V
Output Capacitance(Coss)22pF
Current - Continuous Drain(Id)2A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.5V
Pd - Power Dissipation1W
Reverse Transfer Capacitance (Crss@Vds)15pF
RDS(on)160mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)310pF

Technical details

P-Channel 60V 2A 1W Surface Mount SOT-23

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