AGMSEMI AGM218ME

AGMSEMI · FETs & Power MOSFETs · MPN AGM218ME

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Specifications

Drain to Source Voltage20V
Gate Charge(Qg)11nC@4.5V;18nC@10V
Current - Continuous Drain(Id)6A
Output Capacitance(Coss)135pF;115pF
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))700mV
Pd - Power Dissipation2W
RDS(on)18mΩ@4.5V;28mΩ@4.5V
Reverse Transfer Capacitance (Crss@Vds)125pF;109pF
Number1 N-Channel + 1 P-Channel
Input Capacitance(Ciss)637pF;673pF
TypeN-Channel + P-Channel

Technical details

N-Channel+P-Channel 20V 6A 2W Surface Mount SOT-23-6L

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