AGMSEMI · FETs & Power MOSFETs · MPN AGM218MAP
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| Gate Charge(Qg) | 11nC@4.5V;18nC@10V |
|---|---|
| Drain to Source Voltage | 20V |
| Output Capacitance(Coss) | 135pF;115pF |
| Current - Continuous Drain(Id) | 20A;19A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 700mV |
| Pd - Power Dissipation | 35W |
| RDS(on) | 16mΩ@4.5V;24mΩ@4.5V |
| Reverse Transfer Capacitance (Crss@Vds) | 125pF;109pF |
| Input Capacitance(Ciss) | 637pF;673pF |
| Type | N-Channel + P-Channel |
N-Channel+P-Channel 20V 20A 35W Surface Mount PDFN-8(3.3x3.3)