AGMSEMI AGM216MNE

AGMSEMI · FETs & Power MOSFETs · MPN AGM216MNE

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Specifications

Drain to Source Voltage20V
Gate Charge(Qg)5.4nC@4.5V
Output Capacitance(Coss)67pF
Current - Continuous Drain(Id)3.3A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation1.25W
RDS(on)30mΩ@2.5V
Reverse Transfer Capacitance (Crss@Vds)58pF
Number2 N-Channel
Input Capacitance(Ciss)356pF
TypeN-Channel

Technical details

N-Channel 20V 3.3A 1.25W Surface Mount SOT-23-6L

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