AGMSEMI · FETs & Power MOSFETs · MPN AGM216ME
No reviews yet — be the first to review AGMSEMI AGM216ME.
| Drain to Source Voltage | 20V |
|---|---|
| Gate Charge(Qg) | 18nC@10V |
| Current - Continuous Drain(Id) | 5.6A |
| Output Capacitance(Coss) | 115pF |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| Pd - Power Dissipation | 1.25W |
| RDS(on) | 45mΩ@2.5V |
| Reverse Transfer Capacitance (Crss@Vds) | 110pF |
| Input Capacitance(Ciss) | 671pF |
| Type | N-Channel + P-Channel |
20V 5.6A 1V 1.25W 45mΩ@2.5V N-Channel + P-Channel SOT-23-6L Single FETs, MOSFETs RoHS