AGMSEMI AGM215TS

AGMSEMI · FETs & Power MOSFETs · MPN AGM215TS

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Specifications

Drain to Source Voltage19.5V
Gate Charge(Qg)9.1nC@4.5V
Current - Continuous Drain(Id)7A
Output Capacitance(Coss)150pF
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))700mV
Pd - Power Dissipation1.2W
RDS(on)11mΩ@4.5V
Reverse Transfer Capacitance (Crss@Vds)90pF
Number2 N-Channel
Input Capacitance(Ciss)854pF
TypeN-Channel

Technical details

N-Channel 19.5V 7A 1.2W Surface Mount TSSOP-8

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