AGMSEMI AGM210MAP

AGMSEMI · FETs & Power MOSFETs · MPN AGM210MAP

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Specifications

Drain to Source Voltage20V
Gate Charge(Qg)23nC@4.5V;33nC@4.5V
Output Capacitance(Coss)150pF;170pF
Current - Continuous Drain(Id)25A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))700mV;500mV
Pd - Power Dissipation35W;30.8W
Reverse Transfer Capacitance (Crss@Vds)99pF;140pF
RDS(on)10mΩ@4.5V;13mΩ@4.5V
Number1 N-Channel + 1 P-Channel
Input Capacitance(Ciss)950pF;900pF
TypeN-Channel + P-Channel

Technical details

N-Channel+P-Channel 20V 25A 35W Surface Mount PDFN-8(3.3x3.3)

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