AGMSEMI AGM20T09C

AGMSEMI · FETs & Power MOSFETs · MPN AGM20T09C

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Specifications

Drain to Source Voltage200V
Gate Charge(Qg)145nC@10V
Output Capacitance(Coss)16pF
Current - Continuous Drain(Id)110A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation278W
Reverse Transfer Capacitance (Crss@Vds)389pF
RDS(on)10.5mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)10.656nF
TypeN-Channel

Technical details

200V 110A 278W Through Hole TO-220

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