AGMSEMI AGM20P30AP1

AGMSEMI · FETs & Power MOSFETs · MPN AGM20P30AP1

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Specifications

Drain to Source Voltage20V
Gate Charge(Qg)30nC@10V
Output Capacitance(Coss)350pF
Current - Continuous Drain(Id)30A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))650mV
Pd - Power Dissipation30W
Reverse Transfer Capacitance (Crss@Vds)300pF
RDS(on)7mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)1.6nF
TypeP-Channel

Technical details

P-Channel 20V 30A 30W Surface Mount PDFN-8(3.3x3.3)

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