AGMSEMI AGM20P30AP

AGMSEMI · FETs & Power MOSFETs · MPN AGM20P30AP

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Specifications

Drain to Source Voltage20V
Gate Charge(Qg)38nC@10V
Output Capacitance(Coss)540pF
Current - Continuous Drain(Id)48A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))600mV
Pd - Power Dissipation29W
Reverse Transfer Capacitance (Crss@Vds)440pF
RDS(on)5.5mΩ@4.5V;9mΩ@2.5V
Number1 P-Channel
Input Capacitance(Ciss)2.73nF
TypeP-Channel

Technical details

P-Channel 20V 48A 29W Surface Mount PDFN(3.3x3.3)

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