AGMSEMI AGM20P25AS

AGMSEMI · FETs & Power MOSFETs · MPN AGM20P25AS

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Specifications

Drain to Source Voltage20V
Gate Charge(Qg)17.5nC@10V
Configuration-
Output Capacitance(Coss)115pF
Current - Continuous Drain(Id)6A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation2.1W
RDS(on)28mΩ@4.5V
Reverse Transfer Capacitance (Crss@Vds)109pF
Number1 P-Channel
Input Capacitance(Ciss)673pF

Technical details

P-Channel 20V 6A 2.1W Surface Mount DFN-8(2x2)

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