AGMSEMI AGM20P22E

AGMSEMI · FETs & Power MOSFETs · MPN AGM20P22E

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Specifications

Drain to Source Voltage20V
Gate Charge(Qg)28.5nC@10V
Output Capacitance(Coss)141pF
Current - Continuous Drain(Id)6.2A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation1.7W
Reverse Transfer Capacitance (Crss@Vds)130pF
RDS(on)24mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)959pF
Type-

Technical details

P-Channel 20V 6.2A 1.7W Surface Mount SOT-23-3

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