AGMSEMI AGM20P22AS

AGMSEMI · FETs & Power MOSFETs · MPN AGM20P22AS

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Specifications

Gate Charge(Qg)45nC@10V
Drain to Source Voltage20V
Current - Continuous Drain(Id)8A
Output Capacitance(Coss)165pF
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation3W
Reverse Transfer Capacitance (Crss@Vds)160pF
RDS(on)28mΩ@2.5V
Number1 P-Channel
Input Capacitance(Ciss)1.01nF
TypeP-Channel

Technical details

P-Channel 20V 8A 3W Surface Mount DFN-6(2x2)

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