AGMSEMI AGM20P16MBP

AGMSEMI · FETs & Power MOSFETs · MPN AGM20P16MBP

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Specifications

Drain to Source Voltage20V
Gate Charge(Qg)7.8nC@4V
Current - Continuous Drain(Id)10A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))600mV
Pd - Power Dissipation29W
Reverse Transfer Capacitance (Crss@Vds)250pF
RDS(on)16mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)980pF
TypeP-Channel

Technical details

P-Channel 20V 10A 29W Surface Mount PDFN-8(3.3x3.3)

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