AGMSEMI AGM20P16AS

AGMSEMI · FETs & Power MOSFETs · MPN AGM20P16AS

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Specifications

Gate Charge(Qg)35nC@10V
Drain to Source Voltage20V
Output Capacitance(Coss)450pF
Current - Continuous Drain(Id)26A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))700mV
Pd - Power Dissipation1.7W
Reverse Transfer Capacitance (Crss@Vds)-
RDS(on)12mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)980pF
TypeP-Channel

Technical details

P-Channel 20V 26A 1.7W Surface Mount DFN(2x2)

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