AGMSEMI · FETs & Power MOSFETs · MPN AGM18N20H
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| Drain to Source Voltage | 200V |
|---|---|
| Gate Charge(Qg) | - |
| Output Capacitance(Coss) | 166pF |
| Current - Continuous Drain(Id) | 18A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 158W |
| Reverse Transfer Capacitance (Crss@Vds) | 91pF |
| RDS(on) | 150mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 882pF |
| Type | N-Channel |
200V 18A 4V 158W 150mΩ@10V 1 N-channel N-Channel TO-263 Single FETs, MOSFETs RoHS