AGMSEMI AGM18N20D

AGMSEMI · FETs & Power MOSFETs · MPN AGM18N20D

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Specifications

Drain to Source Voltage200V
Gate Charge(Qg)56nC@10V
Output Capacitance(Coss)166pF
Current - Continuous Drain(Id)18A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation158W
Reverse Transfer Capacitance (Crss@Vds)91pF
RDS(on)120mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)882pF
TypeN-Channel

Technical details

N-Channel 200V 18A 158W Surface Mount TO-252

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