AGMSEMI · FETs & Power MOSFETs · MPN AGM18N10MNA
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| Configuration | - |
|---|---|
| Drain to Source Voltage | 100V |
| Gate Charge(Qg) | 26nC@10V |
| Current - Continuous Drain(Id) | 35A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.2V |
| Pd - Power Dissipation | 50W |
| RDS(on) | 25mΩ@4.5V |
| Reverse Transfer Capacitance (Crss@Vds) | 7.4pF |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | 1.08nF |
| Type | N-Channel |
N-Channel Array 100V 35A 50W Surface Mount PDFN5x6-8