AGMSEMI · FETs & Power MOSFETs · MPN AGM18N10D
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| Drain to Source Voltage | 100V |
|---|---|
| Gate Charge(Qg) | 22.5nC@10V |
| Output Capacitance(Coss) | 300pF |
| Current - Continuous Drain(Id) | 40A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.6V |
| Pd - Power Dissipation | 30W |
| Reverse Transfer Capacitance (Crss@Vds) | 22pF |
| RDS(on) | 16mΩ@10V;20mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 800pF |
N-Channel 100V 40A 30W Surface Mount TO-252