AGMSEMI AGM18N10C

AGMSEMI · FETs & Power MOSFETs · MPN AGM18N10C

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Specifications

Drain to Source Voltage100V
Gate Charge(Qg)22.5nC@10V
Output Capacitance(Coss)300pF
Current - Continuous Drain(Id)45A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.7V
Pd - Power Dissipation45W
Reverse Transfer Capacitance (Crss@Vds)22pF
RDS(on)17.5mΩ@10V;21.5mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)800pF

Technical details

N-Channel 100V 45A 45W Through Hole TO-220

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