AGMSEMI AGM18N10A

AGMSEMI · FETs & Power MOSFETs · MPN AGM18N10A

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Specifications

Gate Charge(Qg)12.5nC@10V
Drain to Source Voltage100V
Output Capacitance(Coss)166pF
Current - Continuous Drain(Id)35A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.6V
Pd - Power Dissipation45W
Reverse Transfer Capacitance (Crss@Vds)5.3pF
RDS(on)17mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)573pF

Technical details

N-Channel 100V 35A 45W Surface Mount PDFN-8L(5x6)

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