AGMSEMI · FETs & Power MOSFETs · MPN AGM16N65F
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| Gate Charge(Qg) | 74nC@10V |
|---|---|
| Drain to Source Voltage | 650V |
| Current - Continuous Drain(Id) | 16A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 53W |
| Reverse Transfer Capacitance (Crss@Vds) | 29pF |
| RDS(on) | - |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.063nF |
650V 16A 3V 53W 1 N-channel TO-220F Single FETs, MOSFETs RoHS