AGMSEMI AGM16N10D

AGMSEMI · FETs & Power MOSFETs · MPN AGM16N10D

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Specifications

Gate Charge(Qg)19nC@10V
Drain to Source Voltage100V
Output Capacitance(Coss)227pF
Current - Continuous Drain(Id)40A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.5V
Pd - Power Dissipation27W
Reverse Transfer Capacitance (Crss@Vds)8.6pF
RDS(on)16mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)790pF

Technical details

N-Channel 100V 40A 27W Surface Mount TO-252

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