AGMSEMI AGM16N10C

AGMSEMI · FETs & Power MOSFETs · MPN AGM16N10C

No reviews yet — be the first to review AGMSEMI AGM16N10C.

Specifications

Gate Charge(Qg)24nC@10V
Drain to Source Voltage100V
Output Capacitance(Coss)280pF
Current - Continuous Drain(Id)55A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.2V
Pd - Power Dissipation103W
Reverse Transfer Capacitance (Crss@Vds)9.8pF
RDS(on)22mΩ@4.5V
Input Capacitance(Ciss)930pF

Technical details

100V 55A 103W Through Hole TO-220

Related FETs & Power MOSFETs