AGMSEMI AGM15P16AS

AGMSEMI · FETs & Power MOSFETs · MPN AGM15P16AS

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Specifications

Drain to Source Voltage18V
Gate Charge(Qg)25nC@10V
Output Capacitance(Coss)192pF
Current - Continuous Drain(Id)7.5A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))600mV
Pd - Power Dissipation1.8W
Reverse Transfer Capacitance (Crss@Vds)177pF
RDS(on)13mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)1.024nF
TypeP-Channel

Technical details

P-Channel 18V 7.5A 1.8W Surface Mount DFN-6(2x2)

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