AGMSEMI AGM15P13E

AGMSEMI · FETs & Power MOSFETs · MPN AGM15P13E

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Specifications

Gate Charge(Qg)37.2nC@10V
Drain to Source Voltage18V
Output Capacitance(Coss)328pF
Current - Continuous Drain(Id)8A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))500mV
Pd - Power Dissipation1.25W
Reverse Transfer Capacitance (Crss@Vds)325pF
RDS(on)14.5mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)1.243nF

Technical details

P-Channel 18V 8A 1.25W Surface Mount SOT-23-3

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