AGMSEMI AGM15P13AS

AGMSEMI · FETs & Power MOSFETs · MPN AGM15P13AS

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Specifications

Gate Charge(Qg)37.2nC@10V
Drain to Source Voltage18V
Output Capacitance(Coss)328pF
Current - Continuous Drain(Id)10A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))500mV
Pd - Power Dissipation1.8W
Reverse Transfer Capacitance (Crss@Vds)325pF
RDS(on)12mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)1.243nF

Technical details

P-Channel 18V 10A 1.8W Surface Mount DFN-8(2x2)

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