AGMSEMI AGM15N10D-G

AGMSEMI · FETs & Power MOSFETs · MPN AGM15N10D-G

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Specifications

Gate Charge(Qg)6nC@10V
Drain to Source Voltage100V
Output Capacitance(Coss)40pF
Current - Continuous Drain(Id)16A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.7V
Pd - Power Dissipation35W
Reverse Transfer Capacitance (Crss@Vds)2.4pF
RDS(on)68mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)520pF

Technical details

N-Channel 100V 16A 35W Surface Mount TO-252

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