AGMSEMI AGM15N10AP

AGMSEMI · FETs & Power MOSFETs · MPN AGM15N10AP

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Specifications

Drain to Source Voltage100V
Gate Charge(Qg)16.4nC@10V
Output Capacitance(Coss)55pF
Current - Continuous Drain(Id)12A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.2V
Pd - Power Dissipation30W
Reverse Transfer Capacitance (Crss@Vds)32pF
RDS(on)85mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)524pF

Technical details

N-Channel 100V 12A 30W Surface Mount PDFN3x3

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