AGMSEMI AGM150P10D

AGMSEMI · FETs & Power MOSFETs · MPN AGM150P10D

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Specifications

Gate Charge(Qg)13nC@10V
Drain to Source Voltage100V
Output Capacitance(Coss)56pF
Current - Continuous Drain(Id)18A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.2V
Pd - Power Dissipation69W
Reverse Transfer Capacitance (Crss@Vds)8.6pF
RDS(on)112mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)700pF

Technical details

P-Channel 100V 18A 69W Surface Mount TO-252

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