AGMSEMI AGM14N10MNA

AGMSEMI · FETs & Power MOSFETs · MPN AGM14N10MNA

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Specifications

Gate Charge(Qg)16.5nC@10V
Drain to Source Voltage100V
Output Capacitance(Coss)315pF
Current - Continuous Drain(Id)50A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.2V
Pd - Power Dissipation70W
Reverse Transfer Capacitance (Crss@Vds)2.5pF
RDS(on)13mΩ@10V
Number2 N-Channel
Input Capacitance(Ciss)930pF
TypeN-Channel

Technical details

N-Channel 100V 50A Surface Mount PDFN5x6-8

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