AGMSEMI AGM14N10AP

AGMSEMI · FETs & Power MOSFETs · MPN AGM14N10AP

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Specifications

Gate Charge(Qg)30.5nC@10V
Drain to Source Voltage100V
Output Capacitance(Coss)470pF
Current - Continuous Drain(Id)40A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.6V
Pd - Power Dissipation68W
Reverse Transfer Capacitance (Crss@Vds)60pF
RDS(on)12mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.09nF

Technical details

N-Channel 100V 40A 68W Surface Mount PDFN3.3x3.3

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