AGMSEMI AGM12T12C

AGMSEMI · FETs & Power MOSFETs · MPN AGM12T12C

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Specifications

Gate Charge(Qg)40nC@10V
Drain to Source Voltage120V
Output Capacitance(Coss)539pF
Current - Continuous Drain(Id)60A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.7V
Pd - Power Dissipation33W
Reverse Transfer Capacitance (Crss@Vds)25pF
RDS(on)10mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.208nF

Technical details

N-Channel 120V 60A 33W Through Hole TO-220C

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