AGMSEMI AGM12T08D

AGMSEMI · FETs & Power MOSFETs · MPN AGM12T08D

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Specifications

Gate Charge(Qg)54nC@10V
Drain to Source Voltage120V
Output Capacitance(Coss)661pF
Current - Continuous Drain(Id)71A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.2V
Pd - Power Dissipation83W
Reverse Transfer Capacitance (Crss@Vds)25pF
RDS(on)11mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)3.036nF
TypeN-Channel

Technical details

N-Channel 120V 71A 83W Surface Mount TO-252

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