AGMSEMI AGM12T05C

AGMSEMI · FETs & Power MOSFETs · MPN AGM12T05C

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Specifications

Gate Charge(Qg)88nC@60V
Drain to Source Voltage120V
Output Capacitance(Coss)840pF
Current - Continuous Drain(Id)100A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.2V
Pd - Power Dissipation125W
Reverse Transfer Capacitance (Crss@Vds)31pF
RDS(on)5.5mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)3.2nF

Technical details

N-Channel 120V 100A 125W Through Hole TO-220C

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