AGMSEMI AGM12N10MNA

AGMSEMI · FETs & Power MOSFETs · MPN AGM12N10MNA

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Specifications

Gate Charge(Qg)21.8nC@10V
Drain to Source Voltage100V
Output Capacitance(Coss)188pF
Current - Continuous Drain(Id)55A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.6V
Pd - Power Dissipation96W
Reverse Transfer Capacitance (Crss@Vds)35pF
RDS(on)11mΩ@10V
Number2 N-Channel
Input Capacitance(Ciss)1.191nF

Technical details

100V 55A 96W Surface Mount PDFN-8(5x6)

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