AGMSEMI AGM12N10D

AGMSEMI · FETs & Power MOSFETs · MPN AGM12N10D

No reviews yet — be the first to review AGMSEMI AGM12N10D.

Specifications

Drain to Source Voltage100V
Gate Charge(Qg)22nC@10V
Output Capacitance(Coss)460pF
Current - Continuous Drain(Id)55A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.8V
Pd - Power Dissipation83W
Reverse Transfer Capacitance (Crss@Vds)9pF
RDS(on)9.3mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.08nF

Technical details

N-Channel 100V 55A 83W Surface Mount TO-252

Related FETs & Power MOSFETs