AGMSEMI AGM12N10AP

AGMSEMI · FETs & Power MOSFETs · MPN AGM12N10AP

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Specifications

Drain to Source Voltage100V
Gate Charge(Qg)22nC@10V
Output Capacitance(Coss)460pF
Current - Continuous Drain(Id)55A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.8V
Pd - Power Dissipation83W
Reverse Transfer Capacitance (Crss@Vds)9pF
RDS(on)9.3mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.08nF
TypeN-Channel

Technical details

N-Channel 100V 55A 83W Surface Mount PDFN3.3x3.3

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