AGMSEMI · FETs & Power MOSFETs · MPN AGM10N65F
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| Gate Charge(Qg) | 48nC@10V |
|---|---|
| Drain to Source Voltage | 650V |
| Output Capacitance(Coss) | 127pF |
| Current - Continuous Drain(Id) | 10A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 65W |
| Reverse Transfer Capacitance (Crss@Vds) | 4.3pF |
| RDS(on) | 770mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.702nF |
N-Channel 650V 10A 65W Through Hole TO-220F