AGMSEMI AGM1099EY

AGMSEMI · FETs & Power MOSFETs · MPN AGM1099EY

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Specifications

Drain to Source Voltage100V
Gate Charge(Qg)3.57nC@10V
Output Capacitance(Coss)30pF
Current - Continuous Drain(Id)5A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.7V
Pd - Power Dissipation3.1W
Reverse Transfer Capacitance (Crss@Vds)3.6pF
RDS(on)92mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)182pF

Technical details

100V 5A 3.1W Surface Mount SOT-89

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