AGMSEMI AGM1099EL

AGMSEMI · FETs & Power MOSFETs · MPN AGM1099EL

No reviews yet — be the first to review AGMSEMI AGM1099EL.

Specifications

Configuration-
Drain to Source Voltage100V
Gate Charge(Qg)3.57nC@10V
Output Capacitance(Coss)-
Current - Continuous Drain(Id)5A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.4V
Pd - Power Dissipation3.1W
Reverse Transfer Capacitance (Crss@Vds)3.6pF
RDS(on)100mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)182pF

Technical details

N-Channel 100V 5A 3.1W Surface Mount SOT-23

Related FETs & Power MOSFETs