AGMSEMI AGM1099E

AGMSEMI · FETs & Power MOSFETs · MPN AGM1099E

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Specifications

Drain to Source Voltage100V
Gate Charge(Qg)3.57nC@10V
Output Capacitance(Coss)30pF
Current - Continuous Drain(Id)5A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.8V
Pd - Power Dissipation1.25W
Reverse Transfer Capacitance (Crss@Vds)3.6pF
RDS(on)100mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)182pF

Technical details

N-Channel 100V 5A 1.25W Surface Mount SOT-23-3

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